Reference Only

SIHD6N80E-GE3

MOSFETs 800V Vds 30V Vgs DPAK (TO-252)

Manufacturer:

Mfr Part:
SIHD6N80E-GE3

TTI Part:
SIHD6N80E-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDPAK-3 (TO-252-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage800 V
Id - Continuous Drain Current5.4 A
Rds On - Drain-Source Resistance820 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge44 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation78 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time18 ns
Forward Transconductance - Min2.5 S
Product TypeMOSFETs
Rise Time9 ns
SeriesSIHD E
SubcategoryTransistors
Typical Turn-Off Delay Time27 ns
Typical Turn-On Delay Time13 ns

Export and Environmental Classification

AttributeDescription
Country of OriginIsrael
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

3,000In Stock

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Reel

(Minimum: 3,000 / Multiples: 3,000)
Quantity Unit PriceExt. Price
$0.86$2,580.00
$0.85$5,100.00
$0.84$10,080.00
$0.83$19,920.00
$0.82$39,360.00
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