Reference Only

SIHD6N80AE-GE3

MOSFETs N-CHANNEL 800V DPAK (TO-252)

Manufacturer:

Mfr Part:
SIHD6N80AE-GE3

TTI Part:
SIHD6N80AE-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDPAK-3 (TO-252-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage800 V
Id - Continuous Drain Current5 A
Rds On - Drain-Source Resistance950 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge15 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation62.5 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time20 ns
Forward Transconductance - Min1.9 S
Product TypeMOSFETs
Rise Time10 ns
SeriesSIHD E
SubcategoryTransistors
Transistor Type1 N - Channel
Typical Turn-Off Delay Time16 ns
Typical Turn-On Delay Time12 ns

Export and Environmental Classification

AttributeDescription
Country of OriginIsrael
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

6,000In Stock

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(Minimum: 3,000 / Multiples: 3,000)
Quantity Unit PriceExt. Price
$0.546$1,638.00
$0.536$3,216.00
$0.52$6,240.00
$0.515$12,360.00
$0.51$24,480.00
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