Reference Only

SIHD6N65E-GE3

MOSFETs 650V Vds 30V Vgs DPAK (TO-252)

Manufacturer:

Mfr Part:
SIHD6N65E-GE3

TTI Part:
SIHD6N65E-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDPAK-3 (TO-252-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current7 A
Rds On - Drain-Source Resistance600 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge24 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation78 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time20 ns
Product TypeMOSFETs
Rise Time12 ns
SeriesSIHD E
SubcategoryTransistors
Typical Turn-Off Delay Time30 ns
Typical Turn-On Delay Time14 ns

Export and Environmental Classification

AttributeDescription
Country of OriginIsrael
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption Number7a
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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