Reference Only

SIHD4N80E-GE3

MOSFETs 800V Vds 30V Vgs DPAK (TO-252)

Manufacturer:

Mfr Part:
SIHD4N80E-GE3

TTI Part:
SIHD4N80E-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDPAK-3 (TO-252-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage800 V
Id - Continuous Drain Current4.3 A
Rds On - Drain-Source Resistance1.1 Ohms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge16 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation69 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time20 ns
Forward Transconductance - Min1.5 S
Product TypeMOSFETs
Rise Time7 ns
SeriesSIHD E
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time26 ns
Typical Turn-On Delay Time12 ns

Export and Environmental Classification

AttributeDescription
Country of OriginIsrael
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

2,500In Stock

Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tube

(Minimum: 50 / Multiples: 50)
Quantity Unit PriceExt. Price
$0.689$34.45
$0.682$68.20
$0.675$337.50
$0.668$668.00
Need more?

My Notes

Sign into see notes.