Reference Only

SIHD1K4N60E-GE3

MOSFETs 600V Vds 30V Vgs DPAK (TO-252)

Manufacturer:

Mfr Part:
SIHD1K4N60E-GE3

TTI Part:
SIHD1K4N60E-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDPAK-3 (TO-252-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current4.2 A
Rds On - Drain-Source Resistance1.45 Ohms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge7.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation63 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time22 ns
Forward Transconductance - Min0.8 S
Product TypeMOSFETs
Rise Time23 ns
SeriesSIHD E
SubcategoryTransistors
Transistor Type1 N-Channel E-Series Power MOSFET
Typical Turn-Off Delay Time10 ns
Typical Turn-On Delay Time10 ns

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

9,000In Stock

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Reel

(Minimum: 3,000 / Multiples: 3,000)
Quantity Unit PriceExt. Price
$0.479$1,437.00
$0.474$2,844.00
$0.469$5,628.00
$0.465$11,160.00
$0.46$22,080.00
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