Reference Only

SIHD12N50E-GE3

MOSFETs 500V Vds 30V Vgs DPAK (TO-252)

Manufacturer:

Mfr Part:
SIHD12N50E-GE3

TTI Part:
SIHD12N50E-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDPAK-3 (TO-252-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current10.5 A
Rds On - Drain-Source Resistance380 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge25 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation114 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time12 ns
Product TypeMOSFETs
Rise Time16 ns
SeriesSIHD E
SubcategoryTransistors
Typical Turn-Off Delay Time29 ns
Typical Turn-On Delay Time13 ns

Export and Environmental Classification

AttributeDescription
Country of OriginIsrael
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

2,550In Stock

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$0.77$38.50
$0.77$77.00
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$0.73$17,520.00
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