Reference Only

SIHB30N60E-GE3

MOSFETs 600V Vds 30V Vgs D2PAK (TO-263)

Manufacturer:

Mfr Part:
SIHB30N60E-GE3

TTI Part:
SIHB30N60E-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3 (TO-263-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current29 A
Rds On - Drain-Source Resistance125 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage2.8 V
Qg - Gate Charge85 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation250 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time36 ns
Product TypeMOSFETs
Rise Time32 ns
SeriesSIHB E
SubcategoryTransistors
Typical Turn-Off Delay Time63 ns
Typical Turn-On Delay Time19 ns

Export and Environmental Classification

AttributeDescription
Country of OriginIsrael
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption Number7a
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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