Reference Only
SIHB28N60EF-GE3
MOSFETs 600V Vds 30V Vgs D2PAK (TO-263)
Datasheet
SIHB28N60EF-GE3 DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Vishay | |
| Product Category | MOSFETs | |
| Technology | Si | |
| Mounting Style | SMD/SMT | |
| Package / Case | D2PAK-3 (TO-263-3) | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 600 V | |
| Id - Continuous Drain Current | 28 A | |
| Rds On - Drain-Source Resistance | 123 mOhms | |
| Vgs - Gate-Source Voltage | - 30 V, 30 V | |
| Vgs th - Gate-Source Threshold Voltage | 2 V | |
| Qg - Gate Charge | 120 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 250 W | |
| Channel Mode | Enhancement | |
| Packaging | Tube | |
| Configuration | Single | |
| Product Type | MOSFETs | |
| Series | SIHB EF | |
| Subcategory | Transistors |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| Country of Origin | Israel |
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | No Lead Free |
| REACH SVHC | Yes |
| REACH Substance Name | Lead (7439-92-1) |
Documents
Datasheet
Technical Resources
1,000In Stock
Quantity
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Unit Price
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Ext. Price
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Tube
(Minimum: 50 / Multiples: 50)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $2.98 | $149.00 | |
| $2.95 | $295.00 | |
| $2.92 | $438.00 | |
| $2.89 | $722.50 | |
| $2.86 | $1,430.00 | |
| $2.83 | $11,320.00 | |
| $2.81 | $22,480.00 |
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