Reference Only

SIHB24N65EFT1-GE3

MOSFETs TO263 650V 24A N-CH MOSFET

Manufacturer:

Mfr Part:
SIHB24N65EFT1-GE3

TTI Part:
SIHB24N65EFT1-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD²PAK-2
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current24 A
Rds On - Drain-Source Resistance156 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge81 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation250 W
Channel ModeEnhancement
PackagingReel
Product TypeMOSFETs
SeriesSIHB
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
Country of OriginIsrael
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

2,400In Stock

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Reel

(Minimum: 800 / Multiples: 800)
Quantity Unit PriceExt. Price
$2.81$2,248.00
$2.78$4,448.00
$2.75$8,800.00
$2.73$17,472.00
$2.70$34,560.00
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