Reference Only
SIHB24N65E-GE3
MOSFETs 650V Vds 30V Vgs D2PAK (TO-263)
Datasheet
SIHB24N65E-GE3 DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Vishay | |
| Product Category | MOSFETs | |
| Technology | Si | |
| Mounting Style | SMD/SMT | |
| Package / Case | D2PAK-3 (TO-263-3) | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 700 V | |
| Id - Continuous Drain Current | 24 A | |
| Rds On - Drain-Source Resistance | 145 mOhms | |
| Vgs - Gate-Source Voltage | - 30 V, 30 V | |
| Vgs th - Gate-Source Threshold Voltage | 4 V | |
| Qg - Gate Charge | 81 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 250 W | |
| Channel Mode | Enhancement | |
| Packaging | Tube | |
| Configuration | Single | |
| Fall Time | 69 ns | |
| Product Type | MOSFETs | |
| Rise Time | 84 ns | |
| Series | SIHB E | |
| Subcategory | Transistors | |
| Typical Turn-Off Delay Time | 70 ns | |
| Typical Turn-On Delay Time | 24 ns |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| Country of Origin | Israel |
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | 7a |
| Lead(PB) in Terminals | No Lead Free |
| REACH SVHC | Yes |
| REACH Substance Name | Lead (7439-92-1) |
Documents
Datasheet
Technical Resources
1,650In Stock
Quantity
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Unit Price
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Ext. Price
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Tube
(Minimum: 10 / Multiples: 10)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $3.04 | $30.40 | |
| $3.01 | $150.50 | |
| $2.98 | $298.00 | |
| $2.95 | $442.50 | |
| $2.92 | $730.00 | |
| $2.90 | $1,450.00 | |
| $2.82 | $2,820.00 |
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