Reference Only

SIHB24N65E-GE3

MOSFETs 650V Vds 30V Vgs D2PAK (TO-263)

Manufacturer:

Mfr Part:
SIHB24N65E-GE3

TTI Part:
SIHB24N65E-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3 (TO-263-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage700 V
Id - Continuous Drain Current24 A
Rds On - Drain-Source Resistance145 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge81 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation250 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time69 ns
Product TypeMOSFETs
Rise Time84 ns
SeriesSIHB E
SubcategoryTransistors
Typical Turn-Off Delay Time70 ns
Typical Turn-On Delay Time24 ns

Export and Environmental Classification

AttributeDescription
Country of OriginIsrael
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption Number7a
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

1,650In Stock

Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tube

(Minimum: 10 / Multiples: 10)
Quantity Unit PriceExt. Price
$3.04$30.40
$3.01$150.50
$2.98$298.00
$2.95$442.50
$2.92$730.00
$2.90$1,450.00
$2.82$2,820.00
Need more?

My Notes

Sign into see notes.