Reference Only

SIHB21N80AE-GE3

MOSFETs TO263 800V 17.4A N-CH MOSFET

Manufacturer:

Mfr Part:
SIHB21N80AE-GE3

TTI Part:
SIHB21N80AE-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3 (TO-263-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage800 V
Id - Continuous Drain Current17.4 A
Rds On - Drain-Source Resistance205 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge48 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 155 C
Pd - Power Dissipation32 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time76 ns
Forward Transconductance - Min4 S
Product TypeMOSFETs
Rise Time38 ns
SeriesSIHB E
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time71 ns
Typical Turn-On Delay Time21 ns

Export and Environmental Classification

AttributeDescription
Country of OriginIsrael
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

2,000In Stock

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$1.42$2,840.00
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