Reference Only

SIHB15N80AE-GE3

MOSFETs TO263 800V 13A N-CH MOSFET

Manufacturer:

Mfr Part:
SIHB15N80AE-GE3

TTI Part:
SIHB15N80AE-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3 (TO-263-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage800 V
Id - Continuous Drain Current13 A
Rds On - Drain-Source Resistance350 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge53 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation156 W
Channel ModeEnhancement
PackagingReel
Fall Time30 ns
Product TypeMOSFETs
Rise Time22 ns
SeriesSIHB E
SubcategoryTransistors
Transistor Type1 N - Channel
Typical Turn-Off Delay Time35 ns
Typical Turn-On Delay Time15 ns

Export and Environmental Classification

AttributeDescription
Country of OriginIsrael
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

1,000In Stock

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Reel

(Minimum: 1,000 / Multiples: 1,000)
Quantity Unit PriceExt. Price
$1.20$1,200.00
$1.17$2,340.00
$1.10$5,500.00
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