Reference Only

SIHB12N65E-GE3

MOSFETs 650V Vds 30V Vgs D2PAK (TO-263)

Manufacturer:

Mfr Part:
SIHB12N65E-GE3

TTI Part:
SIHB12N65E-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3 (TO-263-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage700 V
Id - Continuous Drain Current12 A
Rds On - Drain-Source Resistance380 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge35 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation156 W
Channel ModeEnhancement
PackagingTube
ComplianceDone
ConfigurationSingle
Fall Time18 ns
Product TypeMOSFETs
Rise Time19 ns
SeriesSIHB E
SubcategoryTransistors
Typical Turn-Off Delay Time35 ns
Typical Turn-On Delay Time16 ns

Export and Environmental Classification

AttributeDescription
Country of OriginIsrael
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption Number7a
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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