Reference Only

SIHB11N80E-GE3

MOSFETs 800V Vds 30V Vgs D2PAK (TO-263)

Manufacturer:

Mfr Part:
SIHB11N80E-GE3

TTI Part:
SIHB11N80E-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3 (TO-263-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage800 V
Id - Continuous Drain Current12 A
Rds On - Drain-Source Resistance440 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge88 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation179 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time18 ns
Forward Transconductance - Min4.5 S
Product TypeMOSFETs
Rise Time15 ns
SeriesSIHB E
SubcategoryTransistors
Typical Turn-Off Delay Time55 ns
Typical Turn-On Delay Time18 ns

Export and Environmental Classification

AttributeDescription
Country of OriginIsrael
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

5,000In Stock

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(Minimum: 1,000 / Multiples: 1,000)
Quantity Unit PriceExt. Price
$1.83$1,830.00
$1.81$3,620.00
$1.79$5,370.00
$1.78$8,900.00
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