Reference Only

SIHA20N50E-GE3

MOSFETs TO220 500V 19A N-CH MOSFET

Manufacturer:

Mfr Part:
SIHA20N50E-GE3

TTI Part:
SIHA20N50E-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current19 A
Rds On - Drain-Source Resistance184 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge46 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation34 W
Channel ModeEnhancement
PackagingTube
Product TypeMOSFETs
SeriesSIHA E
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
Country of OriginIsrael
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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Available For Backorder
Lead Time: 27 Weeks
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