Reference Only

SI7415DN-T1-GE3

MOSFETs -60V Vds 20V Vgs PowerPAK 1212-8

Manufacturer:

Mfr Part:
SI7415DN-T1-GE3

TTI Part:
SI7415DN-T1-GE3

EDA / CAD Models

Alternate Part Number

SI7415DN-T1-E3

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-1212-8
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current5.7 A
Rds On - Drain-Source Resistance65 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge25 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation3.8 W
Channel ModeEnhancement
TradenameTrenchFET
PackagingReel
ConfigurationSingle
Fall Time16 ns
Forward Transconductance - Min11 S
Product TypeMOSFETs
Rise Time12 ns
SeriesSI7
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time22 ns
Typical Turn-On Delay Time12 ns
Part # AliasesSI7415DN-GE3

Export and Environmental Classification

AttributeDescription
Country of OriginIsrael
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

0In Stock

6,000
On Order
6,000 expected 14-Dec-27
Please adjust quantity to minimum and multiple values.
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Reel

(Minimum: 3,000 / Multiples: 3,000)
Quantity Unit PriceExt. Price
$0.608$1,824.00
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