Reference Only

SI4435DDY-T1-GE3

MOSFETs -30V Vds 20V Vgs SO-8

Manufacturer:

Mfr Part:
SI4435DDY-T1-GE3

TTI Part:
SI4435DDY-T1-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOIC-8
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current11.4 A
Rds On - Drain-Source Resistance24 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage1 V
Qg - Gate Charge50 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation5 W
Channel ModeEnhancement
TradenameTrenchFET
PackagingReel
ConfigurationSingle
Fall Time12 ns
Forward Transconductance - Min23 S
Product TypeMOSFETs
Rise Time8 ns
SeriesSI4
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time45 ns
Typical Turn-On Delay Time10 ns
Part # AliasesSI4435DDY-GE3

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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