Reference Only

SI4190ADY-T1-GE3

MOSFETs 100V Vds 20V Vgs SO-8

Manufacturer:

Mfr Part:
SI4190ADY-T1-GE3

TTI Part:
SI4190ADY-T1-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOIC-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current18.4 A
Rds On - Drain-Source Resistance7.3 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage1.5 V
Qg - Gate Charge67 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation6 W
Channel ModeEnhancement
TradenameTrenchFET
PackagingReel
ConfigurationSingle
Fall Time10 ns
Forward Transconductance - Min54 S
Product TypeMOSFETs
Rise Time11 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time31 ns
Typical Turn-On Delay Time15 ns
Part # AliasesSI4190ADY-GE3

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541290065
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption Number7a
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

2,500In Stock

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Reel

(Minimum: 2,500 / Multiples: 2,500)
Quantity Unit PriceExt. Price
$0.78$1,950.00
$0.77$3,850.00
$0.77$7,700.00
$0.76$15,200.00
$0.75$30,000.00
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