Reference Only

SI2399DS-T1-GE3

MOSFETs -20V Vds 12V Vgs SOT-23

Manufacturer:

Mfr Part:
SI2399DS-T1-GE3

TTI Part:
SI2399DS-T1-GE3

EDA / CAD Models

Alternate Part Number

SI2399DS-T1-BE3

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage20 V
Id - Continuous Drain Current6 A
Rds On - Drain-Source Resistance34 mOhms
Vgs - Gate-Source Voltage- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage1.5 V
Qg - Gate Charge10 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation2.5 W
Channel ModeEnhancement
TradenameTrenchFET
PackagingReel
ConfigurationSingle
Fall Time9 ns
Product TypeMOSFETs
Rise Time20 ns
SeriesSI2
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time28 ns
Typical Turn-On Delay Time22 ns
Part # AliasesSI2399DS-T1-BE3

Export and Environmental Classification

AttributeDescription
Country of OriginGermany
ECCNEAR99
HTS8541290065
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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Lead Time: 41 Weeks
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