Reference Only

SI2387DS-T1-GE3

MOSFETs SOT23 P-CH 80V 2.1A

Manufacturer:

Mfr Part:
SI2387DS-T1-GE3

TTI Part:
SI2387DS-T1-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage80 V
Id - Continuous Drain Current3 A
Rds On - Drain-Source Resistance242 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge10.2 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation2.5 W
Channel ModeEnhancement
TradenameTrenchFET
PackagingReel
ConfigurationSingle
Fall Time30 ns
Product TypeMOSFETs
Rise Time40 ns
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time44 ns
Typical Turn-On Delay Time50 ns

Export and Environmental Classification

AttributeDescription
Country of OriginGermany
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

0In Stock

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3,000 expected 06-Jan-27
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