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MXP120A080FE-T1GE3

SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET

Manufacturer:

Mfr Part:
MXP120A080FE-T1GE3

TTI Part:
MXP120A080FE-T1GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategorySiC MOSFETs
Mounting StyleSMD/SMT
Package / CaseTO-263-7
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current30 A
Rds On - Drain-Source Resistance100 mOhms
Vgs - Gate-Source Voltage- 10 V, 22 V
Vgs th - Gate-Source Threshold Voltage2.69 V
Qg - Gate Charge47.3 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation140 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time8 ns
PackagingReel
Product TypeSiC MOSFETS
ProductSiC MOSFETS
Rise Time11 ns
SubcategoryTransistors
TechnologySiC
Transistor Type1 N-Channel
Typical Turn-Off Delay Time15 ns
Typical Turn-On Delay Time15 ns

Export and Environmental Classification

AttributeDescription
Country of OriginTaiwan (China)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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