Reference Only

IRF610PBF

MOSFETs TO220 200V 3.3A N-CH MOSFET

Manufacturer:

Mfr Part:
IRF610PBF

TTI Part:
IRF610PBF

EDA / CAD Models

Alternate Part Number

IRF610PBF-BE3

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage200 V
Id - Continuous Drain Current3.3 A
Rds On - Drain-Source Resistance1.5 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge8.2 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation36 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time8.9 ns
Product TypeMOSFETs
Rise Time17 ns
SeriesIRF
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time14 ns
Typical Turn-On Delay Time8.2 ns
Part # AliasesIRF610PBF-BE3

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption Number7a
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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