Reference Only

UT6ME5TCR

MOSFETs DFN 100V 2A DUAL CH

Manufacturer:

Mfr Part:
UT6ME5TCR

TTI Part:
UT6ME5TCR

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDFN-2020-8D
Transistor PolarityN-Channel, P-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current1 A, 2 A
Rds On - Drain-Source Resistance207 mOhms, 840 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge2.8 nC, 6.7 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation2 W
Channel ModeEnhancement
PackagingReel
ConfigurationDual
Fall Time5 ns, 25 ns
Forward Transconductance - Min1 S, 1.3 S
Product TypeMOSFETs
Rise Time6 ns, 5.4 ns
SubcategoryTransistors
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time15 ns, 31 ns
Typical Turn-On Delay Time6 ns, 6.3 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

Application Notes

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 28 Weeks
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$0.203$609.00
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