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UMX1NTN

Bipolar Transistors - BJT DUAL NPN 50V 150MA SOT-363

Manufacturer:

Mfr Part:
UMX1NTN

TTI Part:
UMX1NTN

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-363-6
Transistor PolarityNPN
ConfigurationDual
Collector- Emitter Voltage VCEO Max50 V
Collector- Base Voltage VCBO60 V
Emitter- Base Voltage VEBO7 V
Collector-Emitter Saturation Voltage400 mV
Pd - Power Dissipation150 mW
Gain Bandwidth Product fT180 MHz
Maximum Operating Temperature+ 150 C
SeriesUMX1N
PackagingReel
Continuous Collector Current150 mA
DC Collector/Base Gain hfe Min120 at 1 mA, 6 V
DC Current Gain hFE Max560 at 1 mA, 6 V
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Part # AliasesUMX1N

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541210075
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

102,000In Stock

45,000 expected on  from 26-Aug-26
Please adjust quantity to minimum and multiple values.
Quantity
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Unit Price
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Ext. Price
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Reel

(Minimum: 3,000 / Multiples: 3,000)
Quantity Unit PriceExt. Price
$0.046$138.00
$0.044$264.00
$0.043$516.00
$0.041$861.00
$0.04$1,800.00
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