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SCT4062KWATL

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SiC MOSFETs TO263 1.2KV 24A N-CH SIC

Manufacturer:

Mfr Part:
SCT4062KWATL

TTI Part:
SCT4062KWATL

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategorySiC MOSFETs
Mounting StyleSMD/SMT
Package / CaseTO-263-7
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current24 A
Rds On - Drain-Source Resistance62 mOhms
Vgs - Gate-Source Voltage- 4 V, + 21 V
Vgs th - Gate-Source Threshold Voltage4.8 V
Qg - Gate Charge64 nC
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation93 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time10 ns
Forward Transconductance - Min6.5 S
PackagingReel
Product TypeSiC MOSFETS
ProductSiC MOSFETS
Rise Time11 ns
SubcategoryTransistors
TechnologySiC
Transistor Type1 N-Channel
TypePower MOSFET
Typical Turn-Off Delay Time22 ns
Typical Turn-On Delay Time4.4 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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