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SCT4026DWAHRTL

New Product
SiC MOSFETs TO263 750V 51A N-CH SIC

Manufacturer:

Mfr Part:
SCT4026DWAHRTL

TTI Part:
SCT4026DWAHRTL

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategorySiC MOSFETs
Mounting StyleSMD/SMT
Package / CaseTO-263-7
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage750 V
Id - Continuous Drain Current51 A
Rds On - Drain-Source Resistance26 mOhms
Vgs - Gate-Source Voltage- 4 V, + 21 V
Vgs th - Gate-Source Threshold Voltage4.8 V
Qg - Gate Charge94 nC
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation150 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time13 ns
Forward Transconductance - Min16 S
PackagingReel
Product TypeSiC MOSFETS
ProductSiC MOSFETS
Rise Time22 ns
SubcategoryTransistors
TechnologySiC
Transistor Type1 N-Channel
TypePower MOSFET
Typical Turn-Off Delay Time45 ns
Typical Turn-On Delay Time9.5 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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