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SCT3120ALGC11

SiC MOSFETs N-Ch 650V SiC 21A 120mOhm TrenchMOS

Manufacturer:

Mfr Part:
SCT3120ALGC11

TTI Part:
SCT3120ALGC11

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategorySiC MOSFETs
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current21 A
Rds On - Drain-Source Resistance156 mOhms
Vgs - Gate-Source Voltage- 4 V, + 22 V
Vgs th - Gate-Source Threshold Voltage5.6 V
Qg - Gate Charge38 nC
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation103 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time14 ns
Forward Transconductance - Min2.7 S
PackagingTube
Product TypeSiC MOSFETS
ProductMOSFET's
Rise Time21 ns
SeriesSCT3x
SubcategoryTransistors
TechnologySiC
Transistor Type1 N-Channel
Typical Turn-Off Delay Time23 ns
Typical Turn-On Delay Time14 ns
Part # AliasesSCT3120AL

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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Lead Time: 39 Weeks
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