Reference Only
SCT3080ALGC11
SiC MOSFETs N-Ch 650V 30A Silicon Carbide SiC
Datasheet
SCT3080ALGC11 DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | ROHM Semiconductor | |
| Product Category | SiC MOSFETs | |
| Mounting Style | Through Hole | |
| Package / Case | TO-247N-3 | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 650 V | |
| Id - Continuous Drain Current | 30 A | |
| Rds On - Drain-Source Resistance | 104 mOhms | |
| Vgs - Gate-Source Voltage | - 4 V, + 22 V | |
| Vgs th - Gate-Source Threshold Voltage | 5.6 V | |
| Qg - Gate Charge | 48 nC | |
| Maximum Operating Temperature | + 175 C | |
| Pd - Power Dissipation | 134 W | |
| Channel Mode | Enhancement | |
| Configuration | Single | |
| Fall Time | 16 ns | |
| Forward Transconductance - Min | 3.8 S | |
| Packaging | Tube | |
| Product Type | SiC MOSFETS | |
| Product | MOSFET's | |
| Rise Time | 26 ns | |
| Series | SCT3x | |
| Subcategory | Transistors | |
| Technology | SiC | |
| Transistor Type | 1 N-Channel | |
| Typical Turn-Off Delay Time | 27 ns | |
| Typical Turn-On Delay Time | 16 ns | |
| Part # Aliases | SCT3080AL |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | No Lead Free |
| REACH SVHC | Yes |
| REACH Substance Name | Lead (7439-92-1) |
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Quantity
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Unit Price
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Ext. Price
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Tube
(Minimum: 30 / Multiples: 30)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $5.19 | $155.70 |
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