Reference Only

SCT3080ALGC11

SiC MOSFETs N-Ch 650V 30A Silicon Carbide SiC

Manufacturer:

Mfr Part:
SCT3080ALGC11

TTI Part:
SCT3080ALGC11

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategorySiC MOSFETs
Mounting StyleThrough Hole
Package / CaseTO-247N-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current30 A
Rds On - Drain-Source Resistance104 mOhms
Vgs - Gate-Source Voltage- 4 V, + 22 V
Vgs th - Gate-Source Threshold Voltage5.6 V
Qg - Gate Charge48 nC
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation134 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time16 ns
Forward Transconductance - Min3.8 S
PackagingTube
Product TypeSiC MOSFETS
ProductMOSFET's
Rise Time26 ns
SeriesSCT3x
SubcategoryTransistors
TechnologySiC
Transistor Type1 N-Channel
Typical Turn-Off Delay Time27 ns
Typical Turn-On Delay Time16 ns
Part # AliasesSCT3080AL

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

870In Stock

Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tube

(Minimum: 30 / Multiples: 30)
Quantity Unit PriceExt. Price
$5.19$155.70
Need more?

My Notes

Sign into see notes.