Reference Only

SCT3030KLGC11

SiC MOSFETs N-Ch 1200V SiC 72A 30mOhm TrenchMOS.

Manufacturer:

Mfr Part:
SCT3030KLGC11

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategorySiC MOSFETs
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current72 A
Rds On - Drain-Source Resistance39 mOhms
Vgs - Gate-Source Voltage- 4 V, + 22 V
Vgs th - Gate-Source Threshold Voltage5.6 V
Qg - Gate Charge131 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation339 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time29 ns
Forward Transconductance - Min10.8 S
PackagingTube
Product TypeSiC MOSFETS
ProductMOSFET's
Rise Time42 ns
SeriesSCT3x
SubcategoryTransistors
TechnologySiC
Transistor Type1 N-Channel
Typical Turn-Off Delay Time61 ns
Typical Turn-On Delay Time24 ns
Part # AliasesSCT3030KL

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

0In Stock

Available For Backorder
Lead Time: 27 Weeks
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(Minimum: 450 / Multiples: 1)
Quantity Unit PriceExt. Price
$60.33$27,148.50
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