Reference Only
SCT2H12NZGC11
SiC MOSFETs 1700V 3.7A N-MOSFET Silicon Carbide SiC
Datasheet
SCT2H12NZGC11 DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | ROHM Semiconductor | |
| Product Category | SiC MOSFETs | |
| Mounting Style | Through Hole | |
| Package / Case | TO-3PFM-3 | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 1.7 kV | |
| Id - Continuous Drain Current | 3.7 A | |
| Rds On - Drain-Source Resistance | 1.5 Ohms | |
| Vgs - Gate-Source Voltage | - 6 V, + 22 V | |
| Vgs th - Gate-Source Threshold Voltage | 4 V | |
| Qg - Gate Charge | 14 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 175 C | |
| Pd - Power Dissipation | 35 W | |
| Channel Mode | Enhancement | |
| Configuration | Single | |
| Fall Time | 74 ns | |
| Forward Transconductance - Min | 0.4 S | |
| Packaging | Tube | |
| Product Type | SiC MOSFETS | |
| Product | MOSFET's | |
| Rise Time | 21 ns | |
| Series | SCT2x | |
| Subcategory | Transistors | |
| Transistor Polarity | N-Channel | |
| Transistor Type | 1 N-Channel | |
| Type | N-Channel SiC Power MOSFET | |
| Typical Turn-Off Delay Time | 35 ns | |
| Typical Turn-On Delay Time | 16 ns | |
| Part # Aliases | SCT2H12NZ |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| Country of Origin | Thailand |
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | No Lead Free |
| REACH SVHC | Yes |
| REACH Substance Name | Lead (7439-92-1) |
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SPICE Models
390In Stock
Quantity
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Unit Price
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Ext. Price
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Tube
(Minimum: 10 / Multiples: 10)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $5.19 | $51.90 | |
| $4.83 | $144.90 | |
| $4.79 | $239.50 | |
| $4.58 | $458.00 | |
| $4.39 | $1,097.50 | |
| $4.34 | $1,953.00 | |
| $4.11 | $3,082.50 | |
| $4.07 | $4,884.00 |
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