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SCT2H12NZGC11

SiC MOSFETs 1700V 3.7A N-MOSFET Silicon Carbide SiC

Manufacturer:

Mfr Part:
SCT2H12NZGC11

TTI Part:
SCT2H12NZGC11

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategorySiC MOSFETs
Mounting StyleThrough Hole
Package / CaseTO-3PFM-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.7 kV
Id - Continuous Drain Current3.7 A
Rds On - Drain-Source Resistance1.5 Ohms
Vgs - Gate-Source Voltage- 6 V, + 22 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge14 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation35 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time74 ns
Forward Transconductance - Min0.4 S
PackagingTube
Product TypeSiC MOSFETS
ProductMOSFET's
Rise Time21 ns
SeriesSCT2x
SubcategoryTransistors
TechnologySiC
Transistor Type1 N-Channel
TypeN-Channel SiC Power MOSFET
Typical Turn-Off Delay Time35 ns
Typical Turn-On Delay Time16 ns
Part # AliasesSCT2H12NZ

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

490In Stock

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