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SCT2H12NWBTL1

SiC MOSFETs TO263 1.7KV N-CH 3.9A

Manufacturer:

Mfr Part:
SCT2H12NWBTL1

TTI Part:
SCT2H12NWBTL1

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategorySiC MOSFETs
Mounting StyleSMD/SMT
Package / CaseTO-263CA-7
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.7 kV
Id - Continuous Drain Current3.9 A
Rds On - Drain-Source Resistance1.5 Ohms
Vgs - Gate-Source Voltage- 6 V to + 22 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge24 nC
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation39 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time32 ns
Forward Transconductance - Min0.4 S
PackagingReel
Product TypeSiC MOSFETS
ProductSiC MOSFETS
Rise Time25 ns
SubcategoryTransistors
TechnologySiC
Transistor Type1 N-Channel
TypeN-channel SiC power MOSFET
Typical Turn-Off Delay Time24 ns
Typical Turn-On Delay Time12 ns

Export and Environmental Classification

AttributeDescription
Country of OriginThailand
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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