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SCT2750NWCTL1

SiC MOSFETs TO268 1.7KV 5.9A N CH SIC

Manufacturer:

Mfr Part:
SCT2750NWCTL1

TTI Part:
SCT2750NWCTL1

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategorySiC MOSFETs
Mounting StyleSMD/SMT
Package / CaseTO-263CA-7L
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.7 kV
Id - Continuous Drain Current5.6 A
Rds On - Drain-Source Resistance975 mOhms
Vgs - Gate-Source Voltage- 6 V, + 22 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge28 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation53 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time16 ns
Forward Transconductance - Min0.6 S
PackagingReel
Product TypeSiC MOSFETS
ProductPower MOSFETs
Rise Time12 ns
SubcategoryTransistors
TechnologySiC
Transistor Type1 N-Channel
TypeSiC Power MOSFET
Typical Turn-Off Delay Time26 ns
Typical Turn-On Delay Time17 ns

Export and Environmental Classification

AttributeDescription
Country of OriginThailand
ECCNEAR99
HTS8541100080
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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