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RS7P200BMTB1

MOSFETs DFN 100V 200A N-CH

Manufacturer:

Mfr Part:
RS7P200BMTB1

TTI Part:
RS7P200BMTB1

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDFN5060-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current200 A
Rds On - Drain-Source Resistance4 mOhms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge72 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation217 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time51 ns
Forward Transconductance - Min18 S
Product TypeMOSFETs
Rise Time40 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time67 ns
Typical Turn-On Delay Time53 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

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2,500 expected 10-Sep-26
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