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RS7E200BGTB1

MOSFETs DFN5060 N-CH 30V 390A

Manufacturer:

Mfr Part:
RS7E200BGTB1

TTI Part:
RS7E200BGTB1

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDFN5060-8S
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current390 A
Rds On - Drain-Source Resistance670 uOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge135 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation180 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time155 ns
Forward Transconductance - Min70 S
Product TypeMOSFETs
Rise Time40 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time220 ns
Typical Turn-On Delay Time49 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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