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RS6E122BGTB1

MOSFETs HSOP8 N-CH 30V 155A

Manufacturer:

Mfr Part:
RS6E122BGTB1

TTI Part:
RS6E122BGTB1

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseHSOP-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current155 A
Rds On - Drain-Source Resistance2.16 mOhms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge50 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation89 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time40 ns
Forward Transconductance - Min55 S
Product TypeMOSFETs
Rise Time19 ns
SubcategoryTransistors
Transistor Type2 N-Channel
Typical Turn-Off Delay Time66 ns
Typical Turn-On Delay Time31 ns

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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