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RQ3G120BJFRATCB

MOSFETs Pch -40V -12A, HSMT8AG, Power MOSFET for Automotive

Manufacturer:

Mfr Part:
RQ3G120BJFRATCB

TTI Part:
RQ3G120BJFRATCB

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseHSMT-8
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current12 A
Rds On - Drain-Source Resistance48 mOhms
Vgs - Gate-Source Voltage- 20 V, 5 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge15.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation40 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time9.8 ns
Forward Transconductance - Min6.5 S
Product TypeMOSFETs
Rise Time4.7 ns
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time36 ns
Typical Turn-On Delay Time6.7 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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