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RQ3G110ATTB

MOSFETs HSMT8 P-CH 40V 35A

Manufacturer:

Mfr Part:
RQ3G110ATTB

TTI Part:
RQ3G110ATTB

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseHSMT-8
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current35 A
Rds On - Drain-Source Resistance12.4 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge46 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation20 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time75 ns
Forward Transconductance - Min11 S
Product TypeMOSFETs
Rise Time41 ns
SubcategoryTransistors
Transistor TypePower MOSFET
Typical Turn-Off Delay Time130 ns
Typical Turn-On Delay Time14 ns
Part # AliasesRQ3G110AT

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

Application Notes

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 28 Weeks
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(Minimum: 3,000 / Multiples: 3,000)
Quantity Unit PriceExt. Price
$0.709$2,127.00
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