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RQ3E180AJTB1

MOSFETs HSMT8 N-CH 30V 18A

Manufacturer:

Mfr Part:
RQ3E180AJTB1

TTI Part:
RQ3E180AJTB1

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseHSMT-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current30 A
Rds On - Drain-Source Resistance4.5 mOhms
Vgs - Gate-Source Voltage- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage1.5 V
Qg - Gate Charge39 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation2 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time160 ns
Forward Transconductance - Min24 S
Product TypeMOSFETs
Rise Time22 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time150 ns
Typical Turn-On Delay Time28 ns
Part # AliasesRQ3E180AJ

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

0In Stock

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Lead Time: 30 Weeks
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(Minimum: 3,000 / Multiples: 3,000)
Quantity Unit PriceExt. Price
$0.631$1,893.00
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