Reference Only

RQ3E120ATTB

MOSFETs HSMT8 P-CH 30V 39A

Manufacturer:

Mfr Part:
RQ3E120ATTB

TTI Part:
RQ3E120ATTB

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseHSMT-8
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current39 A
Rds On - Drain-Source Resistance8 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge62 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation2 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time95 ns
Forward Transconductance - Min15 S
Product TypeMOSFETs
Rise Time30 ns
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time140 ns
Typical Turn-On Delay Time20 ns
Part # AliasesRQ3E120AT

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

6,000In Stock

Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Reel

(Minimum: 3,000 / Multiples: 3,000)
Quantity Unit PriceExt. Price
$0.281$843.00
$0.278$1,668.00
$0.274$2,466.00
$0.26$3,900.00
$0.245$7,350.00
Need more?

My Notes

Sign into see notes.