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RH7E04BBJFRATCB

MOSFETs DFN8 P-CH 30V

Manufacturer:

Mfr Part:
RH7E04BBJFRATCB

TTI Part:
RH7E04BBJFRATCB

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDFN-8
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current40 A
Rds On - Drain-Source Resistance7.5 mOhms
Vgs - Gate-Source Voltage- 20 V, 5 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge65 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation75 W
Channel ModeEnhancement
QualificationAEC-Q101
PackagingReel
ConfigurationSingle
Fall Time105 ns
Product TypeMOSFETs
Rise Time17 ns
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time160 ns
Typical Turn-On Delay Time13 ns

Export and Environmental Classification

AttributeDescription
Country of OriginJapan
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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