Reference Only

RGS80TS65DHRC11

IGBTs TO247 650V 40A TRNCH

Manufacturer:

Mfr Part:
RGS80TS65DHRC11

TTI Part:
RGS80TS65DHRC11

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryIGBTs
TechnologySi
Package / CaseTO-247N-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max650 V
Collector-Emitter Saturation Voltage2.1 V
Maximum Gate Emitter Voltage30 V
Continuous Collector Current at 25 C73 A
Pd - Power Dissipation272 W
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 175 C
QualificationAEC-Q101
PackagingTube
Gate-Emitter Leakage Current200 nA
Product TypeIGBT Transistors
SubcategoryIGBTs
Part # AliasesRGS80TS65DHR

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

0In Stock

Available For Backorder
Lead Time: 34 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
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Unit Price
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Ext. Price
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Tube

(Minimum: 450 / Multiples: 450)
Quantity Unit PriceExt. Price
$4.60$2,070.00
Need more?
NCNR - Cannot be cancelled or returned.

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