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RF4G100BGTCR

MOSFETs DFN2020 N-CH 40V 10A

Manufacturer:

Mfr Part:
RF4G100BGTCR

TTI Part:
RF4G100BGTCR

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDFN-2020-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current10 A
Rds On - Drain-Source Resistance14.2 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge10.6 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation2 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time4.5 ns
Forward Transconductance - Min5.2 S
Product TypeMOSFETs
Rise Time6.5 ns
SubcategoryTransistors
Typical Turn-Off Delay Time21 ns
Typical Turn-On Delay Time8.5 ns
Part # AliasesRF4G100BG

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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