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RD3P03BBHTL1

MOSFETs TO252 100V 35A N-CH MOSFET

Manufacturer:

Mfr Part:
RD3P03BBHTL1

TTI Part:
RD3P03BBHTL1

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current35 A
Rds On - Drain-Source Resistance23 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge12.4 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation50 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time12 ns
Forward Transconductance - Min9.2 S
Product TypeMOSFETs
Rise Time17 ns
SubcategoryTransistors
Typical Turn-Off Delay Time30 ns
Typical Turn-On Delay Time14 ns

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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EDA / CAD Models

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Lead Time: 30 Weeks
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$0.742$1,855.00
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