Reference Only
RD3G01BATTL1
MOSFETs TO252 P-CH 40V 10A
Datasheet
RD3G01BATTL1 DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | ROHM Semiconductor | |
| Product Category | MOSFETs | |
| Technology | Si | |
| Mounting Style | SMD/SMT | |
| Package / Case | TO-252-3 | |
| Transistor Polarity | P-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 40 V | |
| Id - Continuous Drain Current | 15 A | |
| Rds On - Drain-Source Resistance | 39 mOhms | |
| Vgs - Gate-Source Voltage | - 10 V, 10 V | |
| Vgs th - Gate-Source Threshold Voltage | 1 V | |
| Qg - Gate Charge | 19.3 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 25 W | |
| Channel Mode | Enhancement | |
| Packaging | Reel | |
| Configuration | Single | |
| Fall Time | 34 ns | |
| Product Type | MOSFETs | |
| Rise Time | 38 ns | |
| Subcategory | Transistors | |
| Transistor Type | 1 P - Channel | |
| Typical Turn-Off Delay Time | 67 ns | |
| Typical Turn-On Delay Time | 9.2 ns | |
| Part # Aliases | RD3G01BAT |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| Country of Origin | China |
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | RoHS Per Exemption RoHS Per Exemption |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Yes Contains Lead |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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Datasheet
Application Notes
Specification Sheets
0In Stock
Available For Backorder
Lead Time: 20 Weeks
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Reel
(Minimum: 2,500 / Multiples: 2,500)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $0.477 | $1,192.50 |
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