Reference Only

RD3E08BBJHRBTL

MOSFETs TO252 P-CH 30V 80A

Manufacturer:

Mfr Part:
RD3E08BBJHRBTL

TTI Part:
RD3E08BBJHRBTL

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current80 A
Rds On - Drain-Source Resistance3.7 mOhms
Vgs - Gate-Source Voltage- 20 V, 5 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge150 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation142 W
Channel ModeEnhancement
QualificationAEC-Q101
PackagingReel
ConfigurationSingle
Fall Time180 ns
Forward Transconductance - Min20 S
Product TypeMOSFETs
Rise Time27 ns
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time220 ns
Typical Turn-On Delay Time19 ns

Export and Environmental Classification

AttributeDescription
Country of OriginJapan
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 28 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Reel

(Minimum: 2,500 / Multiples: 2,500)
Quantity Unit PriceExt. Price
$1.09$2,725.00
Need more?

My Notes

Sign into see notes.