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R8009KNXC7G

MOSFETs TO220 800V 9A N-CH MOSFET

Manufacturer:

Mfr Part:
R8009KNXC7G

TTI Part:
R8009KNXC7G

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220FM-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage800 V
Id - Continuous Drain Current9 A
Rds On - Drain-Source Resistance600 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4.5 V
Qg - Gate Charge27 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation59 W
Channel ModeEnhancement
PackagingBulk
ConfigurationSingle
Fall Time30 ns
Product TypeMOSFETs
Rise Time40 ns
SubcategoryTransistors
Transistor TypePower MOSFET
Typical Turn-Off Delay Time30 ns
Typical Turn-On Delay Time18 ns
Part # AliasesR8009KNX

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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