Reference Only

R6086YNZ4C13

MOSFETs TO247 650V 258A N-CH MOSFET

Manufacturer:

Mfr Part:
R6086YNZ4C13

TTI Part:
R6086YNZ4C13

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247G-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current258 A
Rds On - Drain-Source Resistance44 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage6 V
Qg - Gate Charge110 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation781 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time50 ns
Product TypeMOSFETs
Rise Time60 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time155 ns
Typical Turn-On Delay Time55 ns

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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