Reference Only

R6004RND3TL1

MOSFETs TO252 650V 12A N-CH MOSFET

Manufacturer:

Mfr Part:
R6004RND3TL1

TTI Part:
R6004RND3TL1

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current4 A
Rds On - Drain-Source Resistance1.73 Ohms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage7 V
Qg - Gate Charge10.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation60 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time35 ns
Product TypeMOSFETs
Rise Time10 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time24 ns
Typical Turn-On Delay Time13 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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