Reference Only

HP8ME5TB1

MOSFETs 100V 8.5A, Dual Nch+Pch, HSOP8, Power MOSFET: HP8ME5 is a low on-resistance MOSFET ideal for switching applications.

Manufacturer:

Mfr Part:
HP8ME5TB1

TTI Part:
HP8ME5TB1

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseHSOP-8
Transistor PolarityN-Channel, P-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current8 A, 8.5 A
Rds On - Drain-Source Resistance193 mOhms, 273 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge2.9 nC, 19.7 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation20 W
Channel ModeEnhancement
PackagingReel
ConfigurationDual
Fall Time5 ns, 50 ns
Forward Transconductance - Min1.8 S
Product TypeMOSFETs
Rise Time6 ns, 8.7 ns
SubcategoryTransistors
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time13 ns, 98 ns
Typical Turn-On Delay Time6 ns, 7.3 ns

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

Application Notes

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 30 Weeks
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Reel

(Minimum: 2,500 / Multiples: 2,500)
Quantity Unit PriceExt. Price
$0.52$1,300.00
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